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STB36NM60N STMicroelectronics

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STMicroelectronics

STB36NM60N

N-Channel 600 V 29A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTB36NM60N
DescriptionN-Channel 600 V 29A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 7.13USD 7.13
10USD 6.88045USD 68.8045
25USD 6.6309USD 165.7725
100USD 6.38135USD 638.135
250USD 6.1318USD 1,532.95
500USD 5.88225USD 2,941.125
1,000USD 5.6327USD 5,632.70
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 29A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ II
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs105mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs83.6 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2722 pF @ 100 V
FET Feature-
Power Dissipation (Max)210W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSTB36
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