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STB6N65M2 STMicroelectronics

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STMicroelectronics

STB6N65M2

N-Channel 650 V 4A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTB6N65M2
DescriptionN-Channel 650 V 4A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.45USD 1.45
10USD 1.39925USD 13.9925
25USD 1.3485USD 33.7125
100USD 1.29775USD 129.775
250USD 1.247USD 311.75
500USD 1.19625USD 598.125
1,000USD 1.1455USD 1,145.50
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 4A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.8 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds226 pF @ 100 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSTB6N
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