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STD2HNK60Z-1 STMicroelectronics

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STMicroelectronics

STD2HNK60Z-1

N-Channel 600 V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTD2HNK60Z-1
DescriptionN-Channel 600 V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.51USD 1.51
10USD 1.45715USD 14.5715
25USD 1.4043USD 35.1075
100USD 1.35145USD 135.145
250USD 1.2986USD 324.65
500USD 1.24575USD 622.875
1,000USD 1.1929USD 1,192.90
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesSuperMESH™
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (IPAK)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Base Product NumberSTD2HNK60
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