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STD845DN40 STMicroelectronics

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STMicroelectronics

STD845DN40

Bipolar (BJT) Transistor Array 2 NPN (Dual) 400V 4A 3W Through Hole 8-DIP

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Arrays
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTD845DN40
DescriptionBipolar (BJT) Transistor Array 2 NPN (Dual) 400V 4A 3W Through Hole 8-DIP
CategoryTransistors - Bipolar (BJT) - Arrays
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
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Bipolar (BJT) Transistor Array 2 NPN (Dual) 400V 4A 3W Through Hole 8-DIP

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)400V
Vce Saturation (Max) @ Ib, Ic500mV @ 1A, 4A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce12 @ 2A, 5V
Power - Max3W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / Case8-DIP (0.300", 7.62mm)
Supplier Device Package8-DIP
Base Product NumberSTD845
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