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STFI12N60M2 STMicroelectronics

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STMicroelectronics

STFI12N60M2

N-Channel 600 V 9A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTFI12N60M2
DescriptionN-Channel 600 V 9A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.61USD 1.61
10USD 1.55365USD 15.5365
25USD 1.4973USD 37.4325
100USD 1.44095USD 144.095
250USD 1.3846USD 346.15
500USD 1.32825USD 664.125
1,000USD 1.2719USD 1,271.90
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 9A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M2
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds538 pF @ 100 V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak
Base Product NumberSTFI12N
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