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STFI15N60M2-EP STMicroelectronics

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STMicroelectronics

STFI15N60M2-EP

N-Channel 600 V 11A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTFI15N60M2-EP
DescriptionN-Channel 600 V 11A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.16USD 2.16
10USD 2.0844USD 20.844
25USD 2.0088USD 50.22
100USD 1.9332USD 193.32
250USD 1.8576USD 464.40
500USD 1.782USD 891.00
1,000USD 1.7064USD 1,706.40
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 11A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M2
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs378mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds590 pF @ 100 V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak
Base Product NumberSTFI15N
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