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STFI15NM65N STMicroelectronics

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STMicroelectronics

STFI15NM65N

N-Channel 650 V 12A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTFI15NM65N
DescriptionN-Channel 650 V 12A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.51USD 2.51
10USD 2.42215USD 24.2215
25USD 2.3343USD 58.3575
100USD 2.24645USD 224.645
250USD 2.1586USD 539.65
500USD 2.07075USD 1,035.375
1,000USD 1.9829USD 1,982.90
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 12A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ II
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds983 pF @ 50 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak
Base Product NumberSTFI15N
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