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STFI31N65M5 STMicroelectronics

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STMicroelectronics

STFI31N65M5

N-Channel 650 V 22A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTFI31N65M5
DescriptionN-Channel 650 V 22A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.98USD 3.98
10USD 3.8407USD 38.407
25USD 3.7014USD 92.535
100USD 3.5621USD 356.21
250USD 3.4228USD 855.70
500USD 3.2835USD 1,641.75
1,000USD 3.1442USD 3,144.20
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 22A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ V
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1865 pF @ 100 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak
Base Product NumberSTFI31N
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