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STFI6N65K3 STMicroelectronics

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STMicroelectronics

STFI6N65K3

N-Channel 650 V 5.4A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTFI6N65K3
DescriptionN-Channel 650 V 5.4A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 6.64USD 6.64
10USD 6.4076USD 64.076
25USD 6.1752USD 154.38
100USD 5.9428USD 594.28
250USD 5.7104USD 1,427.60
500USD 5.478USD 2,739.00
1,000USD 5.2456USD 5,245.60
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 5.4A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesSuperMESH3™
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds880 pF @ 50 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak
Base Product NumberSTFI6N
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