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STGP30H65DFB2 STMicroelectronics
STGP30H65DFB2 STMicroelectronics

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STMicroelectronics

STGP30H65DFB2

IGBT Trench Field Stop 650 V 50 A 167 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTGP30H65DFB2
DescriptionIGBT Trench Field Stop 650 V 50 A 167 W Through Hole TO-220
CategoryTransistors - IGBTs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

IGBT Trench Field Stop 650 V 50 A 167 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesHB2
PackageTube
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)90 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A
Power - Max167 W
Switching Energy270µJ (on), 310µJ (off)
Input TypeStandard
Gate Charge90 nC
Td (on/off) @ 25°C18.4ns/71ns
Test Condition400V, 30A, 6.8Ohm, 15V
Reverse Recovery Time (trr)115 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberSTGP30
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