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STGW75H65DFB2-4 STMicroelectronics

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STMicroelectronics

STGW75H65DFB2-4

IGBT Trench Field Stop 650 V 115 A 357 W Through Hole TO-247-4

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTGW75H65DFB2-4
DescriptionIGBT Trench Field Stop 650 V 115 A 357 W Through Hole TO-247-4
CategoryTransistors - IGBTs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 6.72USD 6.72
10USD 6.4848USD 64.848
25USD 6.2496USD 156.24
100USD 6.0144USD 601.44
250USD 5.7792USD 1,444.80
500USD 5.544USD 2,772.00
1,000USD 5.3088USD 5,308.80
  • Product Attributes
  • Ordering Notes

IGBT Trench Field Stop 650 V 115 A 357 W Through Hole TO-247-4

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesHB2
PackageTube
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)115 A
Current - Collector Pulsed (Icm)225 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 75A
Power - Max357 W
Switching Energy992µJ (on), 766µJ (off)
Input TypeStandard
Gate Charge207 nC
Td (on/off) @ 25°C22ns/121ns
Test Condition400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)88 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackageTO-247-4
Base Product NumberSTGW75
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