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STGWT80H65FB STMicroelectronics

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STMicroelectronics

STGWT80H65FB

IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-3P

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTGWT80H65FB
DescriptionIGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-3P
CategoryTransistors - IGBTs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 6.33USD 6.33
10USD 6.10845USD 61.0845
25USD 5.8869USD 147.1725
100USD 5.66535USD 566.535
250USD 5.4438USD 1,360.95
500USD 5.22225USD 2,611.125
1,000USD 5.0007USD 5,000.70
  • Product Attributes
  • Ordering Notes

IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-3P

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)120 A
Current - Collector Pulsed (Icm)240 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 80A
Power - Max469 W
Switching Energy2.1mJ (on), 1.5mJ (off)
Input TypeStandard
Gate Charge414 nC
Td (on/off) @ 25°C84ns/280ns
Test Condition400V, 80A, 10Ohm, 15V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P
Base Product NumberSTGWT80
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