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STH110N10F7-2 STMicroelectronics

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STMicroelectronics

STH110N10F7-2

N-Channel 100 V 110A (Tc) 150W (Tc) Surface Mount H2Pak-2

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTH110N10F7-2
DescriptionN-Channel 100 V 110A (Tc) 150W (Tc) Surface Mount H2Pak-2
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.54USD 3.54
10USD 3.4161USD 34.161
25USD 3.2922USD 82.305
100USD 3.1683USD 316.83
250USD 3.0444USD 761.10
500USD 2.9205USD 1,460.25
1,000USD 2.7966USD 2,796.60
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 110A (Tc) 150W (Tc) Surface Mount H2Pak-2

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesDeepGATE™, STripFET™ VII
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5117 pF @ 50 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSTH110
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