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STH160N4LF6-2 STMicroelectronics

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STMicroelectronics

STH160N4LF6-2

N-Channel 40 V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTH160N4LF6-2
DescriptionN-Channel 40 V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.57USD 1.57
10USD 1.51505USD 15.1505
25USD 1.4601USD 36.5025
100USD 1.40515USD 140.515
250USD 1.3502USD 337.55
500USD 1.29525USD 647.625
1,000USD 1.2403USD 1,240.30
  • Product Attributes
  • Ordering Notes

N-Channel 40 V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs181 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8130 pF @ 20 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSTH160
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