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STH185N10F3-6 STMicroelectronics

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STMicroelectronics

STH185N10F3-6

N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTH185N10F3-6
DescriptionN-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
CategoryTransistors - FETs, MOSFETs - Single
DatasheetNot available
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 4.27USD 4.27
10USD 4.12055USD 41.2055
25USD 3.9711USD 99.2775
100USD 3.82165USD 382.165
250USD 3.6722USD 918.05
500USD 3.52275USD 1,761.375
1,000USD 3.3733USD 3,373.30
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101, STripFET™ F3
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs114.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6665 pF @ 25 V
FET Feature-
Power Dissipation (Max)315W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-6
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Base Product NumberSTH185
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