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STH30N65DM6-7AG STMicroelectronics
STH30N65DM6-7AG STMicroelectronics

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STMicroelectronics

STH30N65DM6-7AG

N-Channel 650 V 28A (Tc) 223W (Tc) Surface Mount H2PAK-7

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTH30N65DM6-7AG
DescriptionN-Channel 650 V 28A (Tc) 223W (Tc) Surface Mount H2PAK-7
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 6.97USD 6.97
10USD 6.72605USD 67.2605
25USD 6.4821USD 162.0525
100USD 6.23815USD 623.815
250USD 5.9942USD 1,498.55
500USD 5.75025USD 2,875.125
1,000USD 5.5063USD 5,506.30
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 28A (Tc) 223W (Tc) Surface Mount H2PAK-7

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 100 V
FET Feature-
Power Dissipation (Max)223W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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