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STH315N10F7-2 STMicroelectronics

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STMicroelectronics

STH315N10F7-2

N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTH315N10F7-2
DescriptionN-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 6.16USD 6.16
10USD 5.9444USD 59.444
25USD 5.7288USD 143.22
100USD 5.5132USD 551.32
250USD 5.2976USD 1,324.40
500USD 5.082USD 2,541.00
1,000USD 4.8664USD 4,866.40
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VII
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12800 pF @ 25 V
FET Feature-
Power Dissipation (Max)315W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSTH315
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