GQGF Electronics
EnglishEnglish
USD
STH80N10LF7-2AG STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STH80N10LF7-2AG

N-Channel 100 V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTH80N10LF7-2AG
DescriptionN-Channel 100 V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101, STripFET™
PackageTape & Reel (TR)
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs28.3 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900 pF @ 25 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSTH80
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7