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STI10N62K3 STMicroelectronics

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STMicroelectronics

STI10N62K3

N-Channel 620 V 8.4A (Tc) 125W (Tc) Through Hole I2PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI10N62K3
DescriptionN-Channel 620 V 8.4A (Tc) 125W (Tc) Through Hole I2PAK
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.07USD 2.07
10USD 1.99755USD 19.9755
25USD 1.9251USD 48.1275
100USD 1.85265USD 185.265
250USD 1.7802USD 445.05
500USD 1.70775USD 853.875
1,000USD 1.6353USD 1,635.30
  • Product Attributes
  • Ordering Notes

N-Channel 620 V 8.4A (Tc) 125W (Tc) Through Hole I2PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesSuperMESH3™
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)620 V
Current - Continuous Drain (Id) @ 25°C8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 50 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Base Product NumberSTI10N
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