GQGF Electronics
EnglishEnglish
USD
STI18N65M2 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STI18N65M2

N-Channel 650 V 12A (Tc) 110W (Tc) Through Hole I2PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI18N65M2
DescriptionN-Channel 650 V 12A (Tc) 110W (Tc) Through Hole I2PAK
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.80USD 2.80
10USD 2.702USD 27.02
25USD 2.604USD 65.10
100USD 2.506USD 250.60
250USD 2.408USD 602.00
500USD 2.31USD 1,155.00
1,000USD 2.212USD 2,212.00
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 12A (Tc) 110W (Tc) Through Hole I2PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M2
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs330mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 100 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Base Product NumberSTI18
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7