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STI18N65M5 STMicroelectronics

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STMicroelectronics

STI18N65M5

N-Channel 650 V 15A (Tc) 110W (Tc) Through Hole I2PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI18N65M5
DescriptionN-Channel 650 V 15A (Tc) 110W (Tc) Through Hole I2PAK
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 4.11USD 4.11
10USD 3.96615USD 39.6615
25USD 3.8223USD 95.5575
100USD 3.67845USD 367.845
250USD 3.5346USD 883.65
500USD 3.39075USD 1,695.375
1,000USD 3.2469USD 3,246.90
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 15A (Tc) 110W (Tc) Through Hole I2PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ V
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs220mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1240 pF @ 100 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Base Product NumberSTI18N
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