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STI260N6F6 STMicroelectronics

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STMicroelectronics

STI260N6F6

N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole I2PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI260N6F6
DescriptionN-Channel 75 V 120A (Tc) 300W (Tc) Through Hole I2PAK
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.56USD 5.56
10USD 5.3654USD 53.654
25USD 5.1708USD 129.27
100USD 4.9762USD 497.62
250USD 4.7816USD 1,195.40
500USD 4.587USD 2,293.50
1,000USD 4.3924USD 4,392.40
  • Product Attributes
  • Ordering Notes

N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole I2PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs183 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11400 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Base Product NumberSTI260N
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