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STI26NM60N STMicroelectronics

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STMicroelectronics

STI26NM60N

N-Channel 600 V 20A (Tc) 140W (Tc) Through Hole I2PAK

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI26NM60N
DescriptionN-Channel 600 V 20A (Tc) 140W (Tc) Through Hole I2PAK
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 4.74USD 4.74
10USD 4.5741USD 45.741
25USD 4.4082USD 110.205
100USD 4.2423USD 424.23
250USD 4.0764USD 1,019.10
500USD 3.9105USD 1,955.25
1,000USD 3.7446USD 3,744.60
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 20A (Tc) 140W (Tc) Through Hole I2PAK

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ II
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 50 V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Base Product NumberSTI26N
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