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STI28N60M2 STMicroelectronics

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STMicroelectronics

STI28N60M2

N-Channel 600 V 22A (Tc) 170W (Tc) Through Hole I2PAK (TO-262)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI28N60M2
DescriptionN-Channel 600 V 22A (Tc) 170W (Tc) Through Hole I2PAK (TO-262)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.50USD 3.50
10USD 3.3775USD 33.775
25USD 3.255USD 81.375
100USD 3.1325USD 313.25
250USD 3.01USD 752.50
500USD 2.8875USD 1,443.75
1,000USD 2.765USD 2,765.00
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 22A (Tc) 170W (Tc) Through Hole I2PAK (TO-262)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M2
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1440 pF @ 100 V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Base Product NumberSTI28
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