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STI34N65M5 STMicroelectronics

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STMicroelectronics

STI34N65M5

N-Channel 650 V 28A (Tc) 190W (Tc) Through Hole I2PAKFP (TO-281)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI34N65M5
DescriptionN-Channel 650 V 28A (Tc) 190W (Tc) Through Hole I2PAKFP (TO-281)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.51USD 5.51
10USD 5.31715USD 53.1715
25USD 5.1243USD 128.1075
100USD 4.93145USD 493.145
250USD 4.7386USD 1,184.65
500USD 4.54575USD 2,272.875
1,000USD 4.3529USD 4,352.90
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 28A (Tc) 190W (Tc) Through Hole I2PAKFP (TO-281)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ V
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62.5 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 100 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak
Base Product NumberSTI34N
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