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STI400N4F6 STMicroelectronics

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STMicroelectronics

STI400N4F6

N-Channel 40 V 120A (Tc) 300W (Tc) Through Hole I2PAK (TO-262)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI400N4F6
DescriptionN-Channel 40 V 120A (Tc) 300W (Tc) Through Hole I2PAK (TO-262)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.04USD 5.04
10USD 4.8636USD 48.636
25USD 4.6872USD 117.18
100USD 4.5108USD 451.08
250USD 4.3344USD 1,083.60
500USD 4.158USD 2,079.00
1,000USD 3.9816USD 3,981.60
  • Product Attributes
  • Ordering Notes

N-Channel 40 V 120A (Tc) 300W (Tc) Through Hole I2PAK (TO-262)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs377 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20000 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Base Product NumberSTI400N
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