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STI45N10F7 STMicroelectronics

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STMicroelectronics

STI45N10F7

N-Channel 100 V 45A (Tc) 60W (Tc) Through Hole I2PAK (TO-262)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI45N10F7
DescriptionN-Channel 100 V 45A (Tc) 60W (Tc) Through Hole I2PAK (TO-262)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.41USD 2.41
10USD 2.32565USD 23.2565
25USD 2.2413USD 56.0325
100USD 2.15695USD 215.695
250USD 2.0726USD 518.15
500USD 1.98825USD 994.125
1,000USD 1.9039USD 1,903.90
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 45A (Tc) 60W (Tc) Through Hole I2PAK (TO-262)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesDeepGATE™, STripFET™ VII
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1640 pF @ 50 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Base Product NumberSTI45N
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