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STMicroelectronics

STI6N90K5

N-Channel 900 V 6A (Tc) 110W (Tc) Through Hole I2PAK

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - FETs, MOSFETs - Single

ManufacturerSTMicroelectronics

Manufacturer Product NumberSTI6N90K5

DescriptionN-Channel 900 V 6A (Tc) 110W (Tc) Through Hole I2PAK

CategoryTransistors - FETs, MOSFETs - Single

EDA / CAD Models

Price & AvailabilityQuote Required

N-Channel 900 V 6A (Tc) 110W (Tc) Through Hole I2PAK

MfrSTMicroelectronics

SeriesMDmesh™ K5

PackageTube

Product StatusActive

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)900 V

Current - Continuous Drain (Id) @ 25°C6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs1.1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id5V @ 100µA

Vgs (Max)±30V

FET Feature-

Power Dissipation (Max)110W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageI2PAK

Package / CaseTO-262-3 Full Pack, I²Pak

Base Product NumberSTI6