GQGF Electronics
EnglishEnglish
USD
STI6N95K5 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STI6N95K5

N-Channel 950 V 9A (Tc) 90W (Tc) Through Hole I2PAK (TO-262)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTI6N95K5
DescriptionN-Channel 950 V 9A (Tc) 90W (Tc) Through Hole I2PAK (TO-262)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.28USD 2.28
10USD 2.2002USD 22.002
25USD 2.1204USD 53.01
100USD 2.0406USD 204.06
250USD 1.9608USD 490.20
500USD 1.881USD 940.50
1,000USD 1.8012USD 1,801.20
  • Product Attributes
  • Ordering Notes

N-Channel 950 V 9A (Tc) 90W (Tc) Through Hole I2PAK (TO-262)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ K5
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)950 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.25Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 100 V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Base Product NumberSTI6
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7