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STL18NM60N STMicroelectronics

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STMicroelectronics

STL18NM60N

N-Channel 600 V 2.1A (Ta), 12A (Tc) 3W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTL18NM60N
DescriptionN-Channel 600 V 2.1A (Ta), 12A (Tc) 3W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.82USD 3.82
10USD 3.6863USD 36.863
25USD 3.5526USD 88.815
100USD 3.4189USD 341.89
250USD 3.2852USD 821.30
500USD 3.1515USD 1,575.75
1,000USD 3.0178USD 3,017.80
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 2.1A (Ta), 12A (Tc) 3W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ II
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2.1A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs310mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 50 V
FET Feature-
Power Dissipation (Max)3W (Ta), 110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (8x8) HV
Package / Case8-PowerVDFN
Base Product NumberSTL18
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