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STL3N65M2 STMicroelectronics

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STMicroelectronics

STL3N65M2

N-Channel 650 V 2.3A (Tc) 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTL3N65M2
DescriptionN-Channel 650 V 2.3A (Tc) 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.06USD 1.06
10USD 1.0229USD 10.229
25USD 0.98580USD 24.645
100USD 0.94870USD 94.87
250USD 0.91160USD 227.90
500USD 0.87450USD 437.25
1,000USD 0.83740USD 837.40
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 2.3A (Tc) 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M2
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds155 pF @ 100 V
FET Feature-
Power Dissipation (Max)22W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (3.3x3.3)
Package / Case8-PowerVDFN
Base Product NumberSTL3
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