GQGF Electronics
EnglishEnglish
USD
STP100N6F7 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STP100N6F7

N-Channel 60 V 100A (Tc) 125W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP100N6F7
DescriptionN-Channel 60 V 100A (Tc) 125W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.89USD 1.89
10USD 1.82385USD 18.2385
25USD 1.7577USD 43.9425
100USD 1.69155USD 169.155
250USD 1.6254USD 406.35
500USD 1.55925USD 779.625
1,000USD 1.4931USD 1,493.10
  • Product Attributes
  • Ordering Notes

N-Channel 60 V 100A (Tc) 125W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesSTripFET™ F7
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1980 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP100
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7