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STP10LN80K5 STMicroelectronics

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STMicroelectronics

STP10LN80K5

N-Channel 800 V 8A (Tc) 110W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP10LN80K5
DescriptionN-Channel 800 V 8A (Tc) 110W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.37USD 3.37
10USD 3.25205USD 32.5205
25USD 3.1341USD 78.3525
100USD 3.01615USD 301.615
250USD 2.8982USD 724.55
500USD 2.78025USD 1,390.125
1,000USD 2.6623USD 2,662.30
  • Product Attributes
  • Ordering Notes

N-Channel 800 V 8A (Tc) 110W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs630mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds427 pF @ 100 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP10
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