GQGF Electronics
EnglishEnglish
USD
STP110N8F6 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STP110N8F6

N-Channel 80 V 110A (Tc) 200W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP110N8F6
DescriptionN-Channel 80 V 110A (Tc) 200W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.09USD 2.09
10USD 2.01685USD 20.1685
25USD 1.9437USD 48.5925
100USD 1.87055USD 187.055
250USD 1.7974USD 449.35
500USD 1.72425USD 862.125
1,000USD 1.6511USD 1,651.10
  • Product Attributes
  • Ordering Notes

N-Channel 80 V 110A (Tc) 200W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesSTripFET™ F6
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9130 pF @ 40 V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP110
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7