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STP11NM65N STMicroelectronics

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STMicroelectronics

STP11NM65N

N-Channel 650 V 11A (Tc) 110W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP11NM65N
DescriptionN-Channel 650 V 11A (Tc) 110W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.36USD 2.36
10USD 2.2774USD 22.774
25USD 2.1948USD 54.87
100USD 2.1122USD 211.22
250USD 2.0296USD 507.40
500USD 1.947USD 973.50
1,000USD 1.8644USD 1,864.40
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 11A (Tc) 110W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ II
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs455mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 50 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP11N
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