GQGF Electronics
EnglishEnglish
USD
STP11NM80 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STP11NM80

N-Channel 800 V 11A (Tc) 150W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP11NM80
DescriptionN-Channel 800 V 11A (Tc) 150W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 6.41USD 6.41
10USD 6.18565USD 61.8565
25USD 5.9613USD 149.0325
100USD 5.73695USD 573.695
250USD 5.5126USD 1,378.15
500USD 5.28825USD 2,644.125
1,000USD 5.0639USD 5,063.90
  • Product Attributes
  • Ordering Notes

N-Channel 800 V 11A (Tc) 150W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43.6 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1630 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP11
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7
STP11NM80 | STMicroelectronics | GQGF Electronic Components