GQGF Electronics
EnglishEnglish
USD
STP15N60M2-EP STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STP15N60M2-EP

N-Channel 600 V 11A (Tc) 110W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP15N60M2-EP
DescriptionN-Channel 600 V 11A (Tc) 110W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.03USD 2.03
10USD 1.95895USD 19.5895
25USD 1.8879USD 47.1975
100USD 1.81685USD 181.685
250USD 1.7458USD 436.45
500USD 1.67475USD 837.375
1,000USD 1.6037USD 1,603.70
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 11A (Tc) 110W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M2-EP
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs378mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds590 pF @ 100 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP15
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7