GQGF Electronics
EnglishEnglish
USD
STP18NM60ND STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STP18NM60ND

N-Channel 600 V 13A (Tc) 110W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP18NM60ND
DescriptionN-Channel 600 V 13A (Tc) 110W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.00USD 5.00
10USD 4.825USD 48.25
25USD 4.65USD 116.25
100USD 4.475USD 447.50
250USD 4.30USD 1,075.00
500USD 4.125USD 2,062.50
1,000USD 3.95USD 3,950.00
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 13A (Tc) 110W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesFDmesh™ II
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs290mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1030 pF @ 50 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP18
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7