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STP26N60DM6 STMicroelectronics

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STMicroelectronics

STP26N60DM6

N-Channel 600 V 18A (Tc) 130W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP26N60DM6
DescriptionN-Channel 600 V 18A (Tc) 130W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 4.05USD 4.05
10USD 3.90825USD 39.0825
25USD 3.7665USD 94.1625
100USD 3.62475USD 362.475
250USD 3.483USD 870.75
500USD 3.34125USD 1,670.625
1,000USD 3.1995USD 3,199.50
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 18A (Tc) 130W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ DM6
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs195mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 100 V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP26
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