GQGF Electronics
EnglishEnglish
USD
STP33N60DM6 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STP33N60DM6

N-Channel 600 V 25A (Tc) 190W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP33N60DM6
DescriptionN-Channel 600 V 25A (Tc) 190W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.45USD 5.45
10USD 5.25925USD 52.5925
25USD 5.0685USD 126.7125
100USD 4.87775USD 487.775
250USD 4.687USD 1,171.75
500USD 4.49625USD 2,248.125
1,000USD 4.3055USD 4,305.50
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 25A (Tc) 190W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ M6
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs128mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 100 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP33
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7