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STP35N60DM2 STMicroelectronics

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STMicroelectronics

STP35N60DM2

N-Channel 600 V 28A (Tc) 210W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP35N60DM2
DescriptionN-Channel 600 V 28A (Tc) 210W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 5.88USD 5.88
10USD 5.6742USD 56.742
25USD 5.4684USD 136.71
100USD 5.2626USD 526.26
250USD 5.0568USD 1,264.20
500USD 4.851USD 2,425.50
1,000USD 4.6452USD 4,645.20
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 28A (Tc) 210W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ DM2
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 100 V
FET Feature-
Power Dissipation (Max)210W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP35
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