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STP65N150M9 STMicroelectronics
STP65N150M9 STMicroelectronics

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STMicroelectronics

STP65N150M9

N-Channel 650 V 20A (Tc) 140W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP65N150M9
DescriptionN-Channel 650 V 20A (Tc) 140W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 4.07USD 4.07
10USD 3.92755USD 39.2755
25USD 3.7851USD 94.6275
100USD 3.64265USD 364.265
250USD 3.5002USD 875.05
500USD 3.35775USD 1,678.875
1,000USD 3.2153USD 3,215.30
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 20A (Tc) 140W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1239 pF @ 400 V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
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