GQGF Electronics
EnglishEnglish
USD
STP6N60M2 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STP6N60M2

N-Channel 600 V 4.5A (Tc) 60W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP6N60M2
DescriptionN-Channel 600 V 4.5A (Tc) 60W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.68USD 1.68
10USD 1.6212USD 16.212
25USD 1.5624USD 39.06
100USD 1.5036USD 150.36
250USD 1.4448USD 361.20
500USD 1.386USD 693.00
1,000USD 1.3272USD 1,327.20
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 4.5A (Tc) 60W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ II Plus
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds232 pF @ 100 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP6N60
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7