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STP8N120K5 STMicroelectronics

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STMicroelectronics

STP8N120K5

N-Channel 1200 V 6A (Tc) 130W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTP8N120K5
DescriptionN-Channel 1200 V 6A (Tc) 130W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 7.23USD 7.23
10USD 6.97695USD 69.7695
25USD 6.7239USD 168.0975
100USD 6.47085USD 647.085
250USD 6.2178USD 1,554.45
500USD 5.96475USD 2,982.375
1,000USD 5.7117USD 5,711.70
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 6A (Tc) 130W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ K5
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs13.7 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds505 pF @ 100 V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberSTP8N120
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