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STQ1HNK60R-AP STMicroelectronics

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STMicroelectronics

STQ1HNK60R-AP

N-Channel 600 V 400mA (Tc) 3W (Tc) Through Hole TO-92-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTQ1HNK60R-AP
DescriptionN-Channel 600 V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.68000USD 0.68000
10USD 0.65620USD 6.562
25USD 0.63240USD 15.81
100USD 0.60860USD 60.86
250USD 0.58480USD 146.20
500USD 0.56100USD 280.50
1,000USD 0.53720USD 537.20
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 400mA (Tc) 3W (Tc) Through Hole TO-92-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesSuperMESH™
PackageCut Tape (CT), Tape & Box (TB)
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds156 pF @ 25 V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Base Product NumberSTQ1HNK60
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