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STQ2HNK60ZR-AP STMicroelectronics

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STMicroelectronics

STQ2HNK60ZR-AP

N-Channel 600 V 500mA (Tc) 3W (Tc) Through Hole TO-92-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTQ2HNK60ZR-AP
DescriptionN-Channel 600 V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.98000USD 0.98000
10USD 0.94570USD 9.457
25USD 0.91140USD 22.785
100USD 0.87710USD 87.71
250USD 0.84280USD 210.70
500USD 0.80850USD 404.25
1,000USD 0.77420USD 774.20
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 500mA (Tc) 3W (Tc) Through Hole TO-92-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesSuperMESH™
PackageCut Tape (CT), Tape & Box (TB)
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product NumberSTQ2HNK60
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