GQGF Electronics
EnglishEnglish
USD
STU1HN60K3 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STU1HN60K3

N-Channel 600 V 1.2A (Tc) 27W (Tc) Through Hole TO-251 (IPAK)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTU1HN60K3
DescriptionN-Channel 600 V 1.2A (Tc) 27W (Tc) Through Hole TO-251 (IPAK)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.04USD 1.04
10USD 1.0036USD 10.036
25USD 0.96720USD 24.18
100USD 0.93080USD 93.08
250USD 0.89440USD 223.60
500USD 0.85800USD 429.00
1,000USD 0.82160USD 821.60
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 1.2A (Tc) 27W (Tc) Through Hole TO-251 (IPAK)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesSuperMESH3™
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs9.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 50 V
FET Feature-
Power Dissipation (Max)27W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (IPAK)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Base Product NumberSTU1HN60
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7