GQGF Electronics
EnglishEnglish
USD
STU4N80K5 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

STU4N80K5

N-Channel 800 V 3A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTU4N80K5
DescriptionN-Channel 800 V 3A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.71USD 1.71
10USD 1.65015USD 16.5015
25USD 1.5903USD 39.7575
100USD 1.53045USD 153.045
250USD 1.4706USD 367.65
500USD 1.41075USD 705.375
1,000USD 1.3509USD 1,350.90
  • Product Attributes
  • Ordering Notes

N-Channel 800 V 3A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesSuperMESH5™
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds175 pF @ 100 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (IPAK)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Base Product NumberSTU4N80
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7