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STW18N60DM2 STMicroelectronics

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STMicroelectronics

STW18N60DM2

N-Channel 600 V 12A (Tc) 90W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW18N60DM2
DescriptionN-Channel 600 V 12A (Tc) 90W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.41USD 3.41
10USD 3.29065USD 32.9065
25USD 3.1713USD 79.2825
100USD 3.05195USD 305.195
250USD 2.9326USD 733.15
500USD 2.81325USD 1,406.625
1,000USD 2.6939USD 2,693.90
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 12A (Tc) 90W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ DM2
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 100 V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW18
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