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STW18NM80 STMicroelectronics

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STMicroelectronics

STW18NM80

N-Channel 800 V 17A (Tc) 190W (Tc) Through Hole TO-247-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTW18NM80
DescriptionN-Channel 800 V 17A (Tc) 190W (Tc) Through Hole TO-247-3
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 7.76USD 7.76
10USD 7.4884USD 74.884
25USD 7.2168USD 180.42
100USD 6.9452USD 694.52
250USD 6.6736USD 1,668.40
500USD 6.402USD 3,201.00
1,000USD 6.1304USD 6,130.40
  • Product Attributes
  • Ordering Notes

N-Channel 800 V 17A (Tc) 190W (Tc) Through Hole TO-247-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs295mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2070 pF @ 50 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberSTW18
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